Conference Chair: Yu. Gulyaev, Russian Academy of Sciences (RAS), Moscow, Russia
Conference Co-chair: V. Lukichev, RAS, Moscow, Russia
Conference Co-chair: G. Krasnikov, RAS, Moscow, Russia

Members:
A. Aseev, Rzhanov Institute of Semiconductor Physics (RAS), Novosibirsk, Russia
D. Averin, Stony Brook University, New York, USA
M. Baklanov, International Microelectronic Center (IMEC), Leuven, Belgium.
F. Balestra, Grenoble Institute of Technology, Grenoble, France
V. Labunov, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
K. Likharev, Stony Brook University, New York, USA
K. Novoselov, University of Manchester, Manchester, UK
T. Otsuji, Tohoku University, Sendai, Japan
I. Rangelow, University of Ilmenau, Ilmenau, Germany
S. Schulz, Fraunhofer Institute for Electronic Nanosystems, Chemnitz, Germany
R. Suris, Ioffe Institute (RAS), St. Peterburg, Russia
A. Toriumi, University of Tokyo, Tokyo, Japan

Program Committee

Chair: Yu. Gulyaev, Kotel'nikov Institute of Radio Engineering and Electronics (RAS), Moscow, Russia
Co-chair: I. Neizvestnyi, Rzhanov Institute of Semiconductor Physics (RAS), Novosibirsk, Russia
Co-chair: V. Lukichev, Institute of Physics and Technology (RAS), Moscow, Russia
Members:
Yu. Bogdanov, Institute of Physics and Technology (RAS), Moscow, Russia
Yu. Chaplygin, National Research University of Electronic Technology, Zelenograd, Russia
M. Chuev, Institute of Physics and Technology (RAS), Moscow, Russia
L. Fedichkin, Moscow Institute of Physics and Technology (TU), Moscow, Russia
F. Komarov, Belorussian State University, Minsk, Belarus
V. Kudrya, Institute of Physics and Technology (RAS), Moscow, Russia
P. Maltsev, V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics (RAS), Moscow, Russia
V. Panchenko, Institute of Laser and Informatics Technologies Problems (RAS), Shatura, Russia
D. Roshchupkin. Institute of Microelectronics Technology and High-Pure Materials (RAS), Chernogolovka, Russia
K. Rudenko, Institute of Physics and Technology (RAS), Moscow, Russia
A. Rudy, P.G. Demidov Yaroslavl State University, Yaroslavl, Russia
V. Ryzhii, Tohoku University, Sendai, Japan
N. Salaschenko, Institute for Physics of Microstructures (RAS), Nizhnii Novgorod, Russia
A. Sigov, Moscow Technology University, Moscow, Russia
V. Vyurkov, Institute of Physics and Technology (RAS), Moscow, Russia

Organizing Committee

Chair: V. Lukichev, Institute of Physics and Technology (RAS), Moscow, Russia
Co-chair: K. Rudenko, Institute of Physics and Technology (RAS), Moscow, Russia
Members:
I. Abramov, Belorussian State University of Informatics and Radioelectronics, Minsk, Belarus
I. Amirov, Institute of Physics and Technology (RAS), Yaroslavl, Russia
Yu. Bogdanov, Institute of Physics and Technology (RAS), Moscow, Russia
A. Buharaev, Kazan E.K. Zavoisky Physical-Technical Institute (RAS), Kasan, Russia
M. Chuev, Institute of Physics and Technology (RAS), Moscow, Russia
A. Gorbazevitch, Lebedev Physical Institute (RAS), Moscow, Russia
Eu. Gornev, Moscow Institute of Physics and Technology (TU), Moscow, Russia
M. Korolev, National Research University of Electronic Technology, Zelenograd, Russia
O. Pchelyakov, Rzhanov Institute of Semiconductor Physics (RAS), Novosibirsk, Russia
V. Popov, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia
V. Rubaev, NIX Company, Moscow, Russia

Local Organizing Committee